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Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process

✍ Scribed by S.S. Kim; G.N. Parsons; G.G. Fountain; G. Lucovsky


Book ID
115986839
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
203 KB
Volume
115
Category
Article
ISSN
0022-3093

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