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Interface engineering for Ge metal-oxide–semiconductor devices

✍ Scribed by A. Dimoulas; D.P. Brunco; S. Ferrari; J.W. Seo; Y. Panayiotatos; A. Sotiropoulos; T. Conard; M. Caymax; S. Spiga; M. Fanciulli; Ch. Dieker; E.K. Evangelou; S. Galata; M. Houssa; M.M. Heyns

Book ID
108289541
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
755 KB
Volume
515
Category
Article
ISSN
0040-6090

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Hybrid metal-insulator-semiconductor structures based on ethyl-hexyl substituted polyfluorene (PF2/6) as the active polymer semiconductor were fabricated on a highly doped p-Si substrate with Al 2 O 3 as the insulating oxide layer. We present detailed frequency-dependent capacitance-voltage (C-V) an