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Interface and thickness control of polytype heterostructures grown by molecular beam epitaxy

✍ Scribed by M. Yano; A. Kawaguchi; M. Ashida; Y. Iwai; M. Inoue

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
466 KB
Volume
40
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES

Strain relaxation in AlN/GaN heterostruc
Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between