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Interband tunneling of holes through single-barrier nanostructures

✍ Scribed by Masato Morifuji; Kenji Taniguchi; Chihiro Hamaguchi


Book ID
116068441
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
257 KB
Volume
361-362
Category
Article
ISSN
0039-6028

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We have fabricated quantum dots and quantum wires in p-type silicon germanium grown on SOI substrates. Electrical characteristics at low temperature show clear Coulomb blockade and Coulomb staircases in both structures. Gate-controlled experiments show conductance oscillations with a single period i