Single-hole tunnelling in SiGe nanostructures

✍ Scribed by S. Kanjanachuchai; J.M. Bonar; G.J. Parker; H. Ahmed

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 797 KB
• Volume: 46
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00037-4

✦ Synopsis

We have fabricated quantum dots and quantum wires in p-type silicon germanium grown on SOI substrates. Electrical characteristics at low temperature show clear Coulomb blockade and Coulomb staircases in both structures. Gate-controlled experiments show conductance oscillations with a single period in quantum dots and multiple periods in quantum wires. While single-hole tunnelling is easily achieved in quantum dots, a more complicated hole transport results in quantum wires with a narrow control range for a true single-hole tunnelling.