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Interaction between clusters in ion implanted and ion beam mixed SiO2:Ag films

✍ Scribed by J.C. Pivin; M.A. Garcia; J. Llopis; H. Hofmeister

Book ID
114165796
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
325 KB
Volume
191
Category
Article
ISSN
0168-583X

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## Abstract An X‐ray Si __L__~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of __d__ = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si int