Interacting diffusion of two dopants through crystalline silicon

✍ Scribed by Fu-bin Li

• Book ID: 104733681
• Publisher: Springer
• Year: 1990
• Tongue: English
• Weight: 431 KB
• Volume: 51
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/bf00348380

✦ Synopsis

The model for the interacting diffusion of two dopants in silicon is analysed in the limit of high peak concentration of one dopant. Several distinct regions of dopant behaviour are identified, in each of which the governing equations are significantly simpler than the full problem. Of particular practical interest is an interior layer which occurs at the pn junction.