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Diffusivity and surface transition rate of positrons in crystalline silicon as a function of dopant concentration

✍ Scribed by W. Bauer-Kugelmann; J.A. Duffy; J. Störmer; G. Kögel; W. Triftshäuser

Book ID
108418467
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
334 KB
Volume
116
Category
Article
ISSN
0169-4332

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Chromium, a p-type dopant, has been incorporated into silicon carbide by laser doping. Secondary ion mass spectrometric data revealed enhanced solid solubility (2.29 Â 10 19 cm À3 in 6H-SiC and 1.42 Â 19 19 cm À3 in 4H-SiC), exceeding the equilibrium limit (3 Â 10 17 cm À3 in 6H-SiC above 2500 °C).