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Dopant diffusion in semiconductors moderated by dopant‐dopant interactions. II. Extension of theory and application to boron and gallium in silicon

✍ Scribed by Aronowitz, Sheldon


Book ID
111931648
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
999 KB
Volume
70
Category
Article
ISSN
0021-8979

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