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Intense laser field effects on exciton states in direct-gap Ge/SiGe quantum well

✍ Scribed by Geng, Zhenduo; Dai, Hua; Chen, Xiaoyang; Wei, Shuyi; Xia, Congxin

Book ID
120204881
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
296 KB
Volume
58
Category
Article
ISSN
0749-6036

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## Abstract The effects of intense laser radiation on the exciton states in GaAs‐Ga~1–__x__~Al~__x__~As quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic ban