Study of direct and indirect exciton states in GaAs-Ga1−xAlxAs quantum dots under the effects of intense laser field and applied electric field
✍ Scribed by Mora-Ramos, M. E.; Duque, C. A.; Kasapoglu, E.; Sari, H.; Sökmen, I.
- Book ID
- 115474740
- Publisher
- Springer
- Year
- 2012
- Tongue
- English
- Weight
- 568 KB
- Volume
- 85
- Category
- Article
- ISSN
- 1434-6036
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## Abstract The effects of intense laser radiation on the exciton states in GaAs‐Ga~1–__x__~Al~__x__~As quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic ban
Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As Q