Direct gap related optical transitions i
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M. Bonfanti; E. Grilli; M. Guzzi; D. Chrastina; G. Isella; H. von KΓ€nel; H. Sigg
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Article
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2009
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Elsevier Science
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English
β 334 KB
An experimental study of the direct-gap related optical transitions in strain-compensated Ge/Si 0.15 Ge 0.85 multiple quantum wells (MQWs) is presented. These structures are of particular interest due to the proximity of G-type and L-type conduction band states and due to their type I band alignment