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Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations

✍ Scribed by R. Hölzl; A. Huber; L. Fabry; K.-J. Range; M. Blietz


Book ID
106023008
Publisher
Springer
Year
2001
Tongue
English
Weight
223 KB
Volume
72
Category
Article
ISSN
1432-0630

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## Abstract The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy‐band gap. The presence of trace of metals on the silicon surfa