Integration of thin electroless copper films in copper interconnect metallization
β Scribed by E. Webb; C. Witt; T. Andryuschenko; J. Reid
- Book ID
- 111587603
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 315 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0021-891X
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π SIMILAR VOLUMES
Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea
Copper thin films were prepared by a metal organic chemical vapor deposition technology on top of TiN / Si substrates, and the films were examined by varying the experimental substrate temperature and copper source vapor pressure. Emerging semiconductor sub-quarter-micron technologies require a mult