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Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization

โœ Scribed by A. Kohn; M. Eizenberg; Y. Shacham-Diamand; Y. Sverdlov


Book ID
108466971
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
345 KB
Volume
302
Category
Article
ISSN
0921-5093

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๐Ÿ“œ SIMILAR VOLUMES


Evaluation of electroless deposited Co(W
โœ A. Kohn; M. Eizenberg; Y. Shacham-Diamand; B. Israel; Y. Sverdlov ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 231 KB

Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea

Electroless deposition of Co(W) thin fil
โœ Y Sverdlov; Y Shacham-Diamand ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 574 KB

Thin films of cobalt that contain small amounts of tungsten [Co(W)] were deposited by the electroless process. Those films do not contain either phosphorus or boron which are included in most electroless cobalt films processes. The deposition bath for Co(W) thin films include Co ions, tungstate ions

Electrical resistivity of thin electrole
โœ E.E. Glickman; V. Bogush; A. Inberg; Y. Shacham-Diamand; N. Croitoru ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 344 KB

It is shown that optimization of the electroless deposition and the use of vacuum annealing yield dramatic decrease in the resistivity and its scatter in 100-and 50-nm silver-tungsten (Ag-W) films. Physical processes, which control the resistivity drop during low-temperature annealing and the residu