Electroless deposited Co(W,P) thin films were evaluated as diffusion barriers for copper metallization. Capacitance versus time measurements of MOS structures as well as SIMS depth profiles indicate that 30-nm-thick films can function as effective barriers against copper diffusion after thermal trea
Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization
โ Scribed by A. Kohn; M. Eizenberg; Y. Shacham-Diamand; Y. Sverdlov
- Book ID
- 108466971
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 345 KB
- Volume
- 302
- Category
- Article
- ISSN
- 0921-5093
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๐ SIMILAR VOLUMES
Thin films of cobalt that contain small amounts of tungsten [Co(W)] were deposited by the electroless process. Those films do not contain either phosphorus or boron which are included in most electroless cobalt films processes. The deposition bath for Co(W) thin films include Co ions, tungstate ions
It is shown that optimization of the electroless deposition and the use of vacuum annealing yield dramatic decrease in the resistivity and its scatter in 100-and 50-nm silver-tungsten (Ag-W) films. Physical processes, which control the resistivity drop during low-temperature annealing and the residu