✦ LIBER ✦

Integration of ferroelectric SrBi2Ta2O9 -based capacitors in 0.35 μm CMOS technology

✍ Scribed by J. G. Lisoni; J. A. Johnson; L. Goux; M. Schwitters; V. Paraschiv; D. Maes; L. Haspeslagh; C. Caputa; P. Casella; R. Zambrano; G. Vecchio; H. Monchoix; L. Van Autryve; D. J. Wouters

Book ID: 104556598
Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 292 KB
Volume: 1
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200404886

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Scaling potential of pin-type 3-D SBT fe

Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology

✍ L. Goux; D. Maes; J.G. Lisoni; H. Vander Meeren; V. Paraschiv; L. Haspeslagh; C. 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 281 KB

A 1.2-V fully integrated 2.4-GHz low-noi

A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-μm CMOS technology

✍ C. C. Meng; M. H. Chiang; T. H. Wu 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 314 KB

## Abstract A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high out

Improvement of electric fatigue properti

Improvement of electric fatigue properties in Pb0.94La0.04(Zr0.70Ti0.30)O3 ferroelectric capacitors due to SrBi2Nb2O9 incorporation

✍ Ningxin Zhang; Longtu Li; Zhilun Gui 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 273 KB

Analysis and design of amplifiers and co

Analysis and design of amplifiers and comparators in CMOS 0.35 μm technology

✍ Fernando Paixão Cortes; Eric Fabris; Sergio Bampi 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 538 KB

A Switched Opamp-Based Bandpass Filter:

A Switched Opamp-Based Bandpass Filter: Design and Implementation in a 0.35 μm CMOS Technology

✍ L. Quintanilla; J. Arias; L. Enríquez; J. Vicente; J. Barbolla; D. Vázquez; A. R 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 161 KB

Design and test of a 64-channel charge m

Design and test of a 64-channel charge measurement ASIC developed in CMOS 0.35 μm technology

✍ A. La Rosa; G. Mazza; M. Donetti; F. Marchetto; L. Luetto; A. Attili; F. Bourhal 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 440 KB