𝔖 Bobbio Scriptorium
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Insulator layer formed in silicon


Book ID
109689240
Publisher
Nature Publishing Group
Year
1974
Tongue
English
Weight
135 KB
Volume
247
Category
Article
ISSN
0028-0836

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Optical effects of doped top layers in s
✍ Yu Yuehui; Lin Chenglu; Zou Shichang πŸ“‚ Article πŸ“… 1995 πŸ› Springer 🌐 English βš– 338 KB

Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were