Optical effects of doped top layers in s
β
Yu Yuehui; Lin Chenglu; Zou Shichang
π
Article
π
1995
π
Springer
π
English
β 338 KB
Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were