Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation
โ Scribed by Chu, P.K.; Shu Qin; Chung Chan; Cheung, N.W.; Ko, P.K.
- Book ID
- 114558459
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 160 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0093-3813
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๐ SIMILAR VOLUMES
Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 โข 10 17 , 2.5 โข 10 17 and 5 โข 10 17 ions cm ร2 sequentially in the ratio 1:1 at 150 keV into p-type
Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (โฅ 1 ร 10 17 ions-cm -2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR an