𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Proton implantation of the power MOSFET to improve its built-in diode reverse recovery

✍ Scribed by Zhu, R.; Chow, T.P.

Book ID: 120045269
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Tongue: English
Weight: 264 KB
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ISPSD.1998.702698

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Trends in power discrete devices

✍ Baliga, B.J. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 629 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Smart power approaches VLSI complexity

✍ Contiero, C.; Galbiati, P.; Palmieri, M.; Ricotti, G.; Stella, R. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 770 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - CTC: a CMOS thyristor cascode

✍ Xu, S.; Constapel, R.; Silber, D. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 373 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Analytical model for high current density trench gate MOSFET

✍ Dharmawardana, K.G.P.; Amaratunga, G.A.J. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 391 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A new current limit circuit for smart discrete devices

✍ Shen, Z.J.; Robb, S.P. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 300 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - 4.5 kV soft recovery diode with carrier stored structure

✍ Satoh, K.; Nakagawa, T.; Morishita, K.; Koga, S.; Kawakami, A. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 339 KB