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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Analytical model for high current density trench gate MOSFET

✍ Scribed by Dharmawardana, K.G.P.; Amaratunga, G.A.J.

Book ID: 126801917
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Tongue: English
Weight: 391 KB
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702712

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