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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - 1200 V-trench-IGBT study with square short circuit SOA

✍ Scribed by Laska, T.; Pfirsch, F.; Hirler, F.; Niedermeyr, J.; Schaffer, C.; Schmidt, T.

Book ID: 111886167
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Tongue: English
Weight: 586 KB
Volume: 0
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702738

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