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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low forward voltage drop 4500 V trench IGBT

✍ Scribed by Nitta, T.; Uenishi, A.; Minato, T.; Kusunoki, S.; Takahashi, T.; Nakamura, H.; Nakamura, K.; Aono, S.; Harada, M.

Book ID: 111886166
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Tongue: English
Weight: 412 KB
Volume: 0
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702625

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