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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - High voltage IGBT (HV-IGBT) having p/sup +//p/sup -/ collector region

✍ Scribed by Suekawa, E.; Tomomatsu, Y.; Enjoji, T.; Kondoh, H.; Takeda, M.; Yamada, T.

Book ID: 111863864
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Weight: 280 KB
Volume: 0
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702680

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