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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation

✍ Scribed by Thalhammer, R.; Furbock, C.; Seliger, N.; Deboy, G.; Gornik, E.; Wachutka, G.

Book ID: 115440952
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Tongue: English
Weight: 305 KB
Volume: 0
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702668

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