𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A novel concept for fast recovery diodes having junction charge extraction (JCE) regions

✍ Scribed by Rahimo, M.T.; Crees, D.E.; Shammas, N.Y.A.

Book ID: 111922033
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Tongue: English
Weight: 518 KB
Volume: 0
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702695

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Trends in power discrete devices

✍ Baliga, B.J. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 629 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - CTC: a CMOS thyristor cascode

✍ Xu, S.; Constapel, R.; Silber, D. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 373 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A new lateral insulated base emitter switched thyristor

✍ Sankara Narayanan, E.M.; Qin, Z.; De Souza, M.M.; Amaratunga, G. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 405 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - 4.5 kV soft recovery diode with carrier stored structure

✍ Satoh, K.; Nakagawa, T.; Morishita, K.; Koga, S.; Kawakami, A. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan ⚖ 339 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Analysis of MCCT's turn-on and short circuit operation

✍ Iwaana, T.; Iwamuro, N.; Harada, Y.; Onozawa, Y.; Seki, Y. 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 389 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low forward voltage drop 4500 V trench IGBT

✍ Nitta, T.; Uenishi, A.; Minato, T.; Kusunoki, S.; Takahashi, T.; Nakamura, H.; N 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 412 KB