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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

✍ Scribed by Barthelmess, R.; Beuermann, M.; Metzner, D.; Schmidt, G.; Westerholt, D.; Winter, N.; Gerstenmaier, Y.C.; Reznik, D.; Ruff, M.; Schulze, H.-J.; Willmeroth, A.

Book ID: 111863863
Publisher: Inst. Electr. Eng. Japan
Year: 1998
Weight: 534 KB
Volume: 0
Category: Article
ISBN-13: 9780780347526
DOI: 10.1109/ispsd.1998.702664

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