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InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy

โœ Scribed by Michel, E.; Xu, J.; Kim, J.D.; Ferguson, I.; Razeghi, M.


Book ID
119785424
Publisher
IEEE
Year
1996
Tongue
English
Weight
344 KB
Volume
8
Category
Article
ISSN
1041-1135

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Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th