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Inner-shell electron excitation in the methylmethoxysilanes

โœ Scribed by D.C. Winkler; J.H. Moore; J.A. Tossell

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
615 KB
Volume
222
Category
Article
ISSN
0009-2614

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โœฆ Synopsis

The effect of electron-donating substituents on the low-lying unoccupied valence orbit& in the series of silanes Si(CHs),(OCHs).,_, is investigated in an examination of electron-impact energy-loss spectra near the Si 2p ionization edge, and by means of ab initio calculations of the core-hole states populated by the inner-shell excitation. The substituent effect on the LUMO energies, as well as upon the 29Si NMR shieldings, is considered along with the consequences of valence-Rydberg mixing.

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