The effect of electron-donating substituents on the low-lying unoccupied valence orbit& in the series of silanes Si(CHs),(OCHs).,\_, is investigated in an examination of electron-impact energy-loss spectra near the Si 2p ionization edge, and by means of ab initio calculations of the core-hole states
Inner-shell electron excitation in the chlorosilanes
โ Scribed by D.C. Winkler; J.H. Moore; J.A. Tossell
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 664 KB
- Volume
- 219
- Category
- Article
- ISSN
- 0009-2614
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โฆ Synopsis
Electron-impact energy-loss spectra near the Si 2p ionization edge in di-, tri-, and tetra-chlorosilane are reported. Term values for excitation to valence-shell orbitals are correlated with attachment energies from electron transmission spectra which identify negative-ion resonances associated with electron capture into analogous orbitals. The correlation parameter is a stabilization energy given by the sum of corresponding attachment energies and term values. A previous assumption of the constancy of the stabilization energy across a homologous series is questioned. Ab initio calculations are employed to assign inner-shell excitation features and to reevaluate assignments of electron transmission spectra.
๐ SIMILAR VOLUMES
An overview of recently discovered multi-electron excitation effects above several inner-shell X-ray absorption edges is presented. Specific examples of the C1 K L-edge in NH4CIO4 and Br KM-edges in HBr are reported. The general relevance of these phenomena for EXAFS data analysis is emphasized and