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Inner electric field mechanism of tunneling of electron-hole pair in porous silicon

✍ Scribed by G Qin

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
613 KB
Volume
95
Category
Article
ISSN
0038-1098

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A recombination radiation line (S-line) of surface 2D holes and 2D nonequilibrium electrons is observed in electroluminescence spectra of tunneling [100] silicon MOS (metalΒ±oxideΒ±semiconductor) diodes under tunneling injection of electrons into a selforganized electron quantum well. The electron qua