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InN growth on sapphire using different nitridation procedures

✍ Scribed by Drago, M. ;Werner, C. ;Pristovsek, M. ;Pohl, U. W. ;Richter, W.

Book ID
105363649
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
145 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We studied optimal sapphire nitridation conditions with ammonia for the metal‐organic vapor phase epitaxy of InN using in‐situ spectroscopic ellipsometry (SE). SE indicates the formation of a complete AlN‐containing layer on top of the sapphire surface during the first 45 s of nitridation. Further nitridation leads to a growth of the AlN‐like layer by nitrogen diffusion and to roughening. Successively, a set of high quality InN films were grown onto sapphire substrates after different nitridation duration. Electronic characterisation clearly indicates optimum InN quality for 45 s of sapphire nitridation, i.e. when only the sapphire surface is nitridated, as determined by in‐situ SE. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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MOVPE growth of InN with ammonia on sapp
MOVPE growth of InN with ammonia on sapphire
✍ Drago, M. ;Vogt, P. ;Richter, W. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 330 KB

## Abstract MOVPE growth of InN on sapphire substrate is reviewed focusing on the critical growth parameters. Based on our in situ spectroscopic ellipsometry results obtained during growth and the results found in the literature we suggest a strategy for successful growth of high quality InN layers