𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of semipolar (10) InN on m -plane sapphire using MOVPE

✍ Scribed by Duc V. Dinh; M. Pristovsek; R. Kremzow; M. Kneissl

Book ID
112182986
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
308 KB
Volume
4
Category
Article
ISSN
1862-6254

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

MOVPE growth of semipolar AlN on m-plane
MOVPE growth of semipolar AlN on m-plane sapphire
✍ J. Stellmach; M. Frentrup; F. Mehnke; M. Pristovsek; T. Wernicke; M. Kneissl πŸ“‚ Article πŸ“… 2012 πŸ› Elsevier Science 🌐 English βš– 469 KB
MOVPE growth and characterization of pol
MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate
✍ Moret, Matthieu ;Ruffenach, Sandra ;Briot, Olivier ;Gil, Bernard πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 424 KB

## Abstract We have investigated the heteroepitaxy of indium nitride (InN) directly grown on nitridated sapphire substrates having different orientations. Growths were performed on __C__, __A__, __M__ and __R__‐plane oriented sapphire in order to analyse the substrate orientation effect on the stru

MOVPE growth of InN with ammonia on sapp
MOVPE growth of InN with ammonia on sapphire
✍ Drago, M. ;Vogt, P. ;Richter, W. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 330 KB

## Abstract MOVPE growth of InN on sapphire substrate is reviewed focusing on the critical growth parameters. Based on our in situ spectroscopic ellipsometry results obtained during growth and the results found in the literature we suggest a strategy for successful growth of high quality InN layers