MOVPE growth of semipolar AlN on m-plane sapphire
β Scribed by J. Stellmach; M. Frentrup; F. Mehnke; M. Pristovsek; T. Wernicke; M. Kneissl
- Book ID
- 116630375
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 469 KB
- Volume
- 355
- Category
- Article
- ISSN
- 0022-0248
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## Abstract We have investigated the heteroepitaxy of indium nitride (InN) directly grown on nitridated sapphire substrates having different orientations. Growths were performed on __C__, __A__, __M__ and __R__βplane oriented sapphire in order to analyse the substrate orientation effect on the stru
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## Abstract The growth of semipolar AlN and AlGaN epilayers on __m__βplane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) has been investigated for the first time. The implementation of pulsed MOCVD technique for the deposition of the AlN buffer, and the insertion of a strain