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Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

✍ Scribed by A. E. Zhukov; V. M. Ustinov; A. Yu. Egorov; A. R. Kovsh; A. F. Tsatsul’nikov; M. V. Maximov; N. N. Ledentsov; S. V. Zaitsev; N. Yu. Gordeev; V. I. Kopchatov; Y. M. Shernyakov; P. S. Kop’ev; D. Bimberg; Zh. I. Alferov

Book ID
107457783
Publisher
Springer US
Year
1998
Tongue
English
Weight
130 KB
Volume
27
Category
Article
ISSN
0361-5235

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Radiation characteristics of injection l
Radiation characteristics of injection lasers based on vertically coupled quantum dots
✍ S.V. Zaitsev; N.Yu. Gordeev; Yu.M. Sherniakov; V.M. Ustinov; A.E. Zhukov; A.Yu. 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 130 KB

We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm -2 (300 K) with an increase of the number of QD stacks (N ) up to 10. For N ≥ 3 lasing occurs