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Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold

✍ Scribed by N. Yu. Gordeev; S. V. Zaitsev; L. Ya. Karachinsky; V. I. Kopchatov; I. I. Novikov; V. M. Ustinov; P. S. Kop’ev

Book ID
110133438
Publisher
Springer
Year
2003
Tongue
English
Weight
50 KB
Volume
37
Category
Article
ISSN
1063-7826

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Radiation characteristics of injection l
Radiation characteristics of injection lasers based on vertically coupled quantum dots
✍ S.V. Zaitsev; N.Yu. Gordeev; Yu.M. Sherniakov; V.M. Ustinov; A.E. Zhukov; A.Yu. 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 130 KB

We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm -2 (300 K) with an increase of the number of QD stacks (N ) up to 10. For N ≥ 3 lasing occurs