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Gain in injection lasers based on self-organized quantum dots

✍ Scribed by A. R. Kovsh; A. E. Zhukov; A. Yu. Egorov; V. M. Ustinov; N. N. Ledentsov; M. V. Maksimov; A. F. Tsatsul’nikov; P. S. Kop’ev

Book ID
110120045
Publisher
Springer
Year
1999
Tongue
English
Weight
129 KB
Volume
33
Category
Article
ISSN
1063-7826

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We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm -2 (300 K) with an increase of the number of QD stacks (N ) up to 10. For N ≥ 3 lasing occurs