Initial wafer heating analysis for a SCALPEL lithography system

✍ Scribed by Stuart T. Stanton; J. Alexander Liddle; Gregg M. Gallatin; Byungkyu Kim; Roxanne L. Engelstad

• Book ID: 104306563
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 499 KB
• Volume: 46
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00070-2

✦ Synopsis

A high-throughput SCALPEL tool will employ a typical exposure current of 30 pA and electron column potential of 100 KV, delivering power up to -3 W through a 0.25 mm (wafer scale) square optical subfield. Electrons lose energy to form heat in the upper 60 gm of a wafer in vacuum during a sub-field exposure period of -200 microseconds, creating significant local wafer heating at the time of image formation. Our initial analysis indicates that expansion-induced pattern placement errors will require a sub-field position correction strategy.