Initial surface reactions of atomic layer deposition
โ Scribed by Jiyoung Kim; Tae Wook Kim
- Book ID
- 107524434
- Publisher
- The Minerals, Metals & Materials Society
- Year
- 2009
- Tongue
- English
- Weight
- 1002 KB
- Volume
- 61
- Category
- Article
- ISSN
- 1047-4838
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, depo
Al O and SiO were deposited on BN particles with atomic layer control using alternating exposures of Al CH rH O 2 3 2 3 3 2 and SiCl rH O, respectively. The sequential surface chemistry was monitored in vacuum using transmission Fourier 4 2 ลฝ . transform infrared FTIR spectroscopy studies on high su