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In–Ga–Zn–O thin film transistor with HfO2 gate insulator prepared using various O2/(Ar + O2) gas ratios

✍ Scribed by Young Je Jo; In-Hwan Lee; Joon Seop Kwak


Book ID
119322465
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
773 KB
Volume
47
Category
Article
ISSN
0025-5408

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