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InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

✍ Scribed by Nakamura, S. ;Kikuchi, A. ;Kusakabe, K. ;Sugihara, D. ;Toyoura, Y. ;Yamada, T. ;Kishino, K.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 130 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<273::aid-pssa273>3.0.co;2-m

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✦ Synopsis

InGaN/GaN MQW and Mg-doped GaN were grown at a high growth temperature of 750 o C using a shutter control method (i.e. the periodically interrupted nitrogen supply method) by the molecular beam epitaxy (MBE) using rf-plasma nitrogen. A residual carrier density of 9.9 Â 10 14 cm ± ±3 for undoped GaN was obtained. Higher order (third to fifth) satellite peaks of InGaN/GaN MQW by double crystal X-ray diffraction (XRD), as well as a single peak photoluminescence emission at 460 nm were observed, indicating that a flat and good MQW was fabricated. The p-type carrier density of Mg-doped GaN was obtained in the range from 1.4 Â 10 16 to 2.0 Â 10 17 cm ± ±3 . P-type carrier density and mobility of 2.0 Â 10 17 cm ± ±3 and 8.2 cm 2 /Vs, respectively, were achieved with a relatively low resistivity of 3.7 W cm.

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