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InGaAs/InP quantum wells with periodic thickness variation

✍ Scribed by A.A. Bernussi; M.J.S.P. Brasil; J.A. Brum; M.A. Cotta; R.A. Hamm; T.W. Staley; S.N.G. Chu; L.R. Harriott; M.B. Panish; H. Temkin


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
310 KB
Volume
37
Category
Article
ISSN
0038-1101

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Band structure of very narrow InGaAs/InP
✍ F. Dujardin; N. MarrΓ©aud; J.P. Laurenti πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 115 KB

Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope approximation, the transfer matrix method is used, with adaptation to multi-band models. A comparison is made for two structures with fundamenta