The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wells

✍ Scribed by A. Antolini; L. Francesio; L. Gastaldi; F. Genova; C. Lamberti; L. Lazzarini; C. Papuzza; C. Rigo; G. Salviati

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 465 KB
• Volume: 127
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(93)90602-s