𝔖 Bobbio Scriptorium
✦   LIBER   ✦

InGaAs/GaInAsP/GaInP strained-layer quantum well separate-confinement heterostructures grown by OMVPE

✍ Scribed by S.H. Groves


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
396 KB
Volume
124
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Long-wavelength strained-layer InGaAs/Ga
✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri