✦ LIBER ✦

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

✍ Scribed by D. A. Vinokurov; D. N. Nikolaev; N. A. Pikhtin; A. L. Stankevich; V. V. Shamakhov; M. G. Rastegaeva; A. V. Rozhkov; I. S. Tarasov

Book ID: 111444800
Publisher: Springer
Year: 2010
Tongue: English
Weight: 144 KB
Volume: 44
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782610120109

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

MOCVD grown InGaAs/GaAs vertical cavity

MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate

✍ Mizutani, A.; Hatori, N.; Nishiyama, N.; Koyama, F.; Iga, K. 📂 Article 📅 1997 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 300 KB

Diode lasers emitting at 1190 nm with a

Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

✍ D. A. Vinokurov; D. N. Nikolaev; N. A. Pikhtin; A. L. Stankevich; V. V. Shamakho 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 144 KB

Study of metamorphic InGaAs/GaAs quantum

Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

✍ Yan Zhu; Hai-qiao Ni; Hai-li Wang; Ji-fang He; Mi-feng Li; Xiang-jun Shang; Zhi- 📂 Article 📅 2011 🏛 Tianjin University of Technology 🌐 English ⚖ 346 KB

Diode lasers emitting at 1220 nm with a

Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

✍ D. A. Vinokurov; V. A. Kapitonov; D. N. Nikolaev; N. A. Pikhtin; A. L. Stankevic 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 171 KB

Laser-diode bars based on AlGaAsP/GaAs h

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

✍ Shamakhov, V. V.; Nikolaev, D. N.; Lyutetskiy, A. V.; Bakhvalov, K. V.; Rastegae 📂 Article 📅 2014 🏛 Springer 🌐 English ⚖ 142 KB

Sb surfactant effect on GaInAs/GaAs high

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

✍ Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 647 KB