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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

✍ Scribed by Shamakhov, V. V.; Nikolaev, D. N.; Lyutetskiy, A. V.; Bakhvalov, K. V.; Rastegaeva, M. G.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

Book ID: 121656735
Publisher: Springer
Year: 2014
Tongue: English
Weight: 142 KB
Volume: 48
Category: Article
ISSN: 1063-7826
DOI: 10.1134/S1063782614030233

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