Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

✍ Scribed by D. A. Vinokurov; D. N. Nikolaev; N. A. Pikhtin; A. L. Stankevich; V. V. Shamakhov; A. D. Bondarev; N. A. Rudova; I. S. Tarasov

• Book ID: 111445040
• Publisher: Springer
• Year: 2011
• Tongue: English
• Weight: 144 KB
• Volume: 45
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782611090260