Site-controlled In(Ga)As/GaAs quantum do
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A. Huggenberger; C. Schneider; C. Drescher; S. Heckelmann; T. Heindel; S Reitzen
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Article
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2011
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Elsevier Science
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English
⚖ 797 KB
We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 1C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 mm period. The SCQDs exhibit a small inhomogeneo