Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

✍ Scribed by A. Huggenberger; C. Schneider; C. Drescher; S. Heckelmann; T. Heindel; S Reitzenstein; M. Kamp; S. Höfling; L. Worschech; A. Forchel

• Book ID: 104022242
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 797 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.144

✦ Synopsis

We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 1C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 mm period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 meV.