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Infrared excitation of the subbands of A δ-layer in GaAs and Si

✍ Scribed by G. Tempel; F. Müller; N. Schwarz; F. Koch; G. Weimann; H.P. Zeindl; I. Eisele


Book ID
118363454
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
348 KB
Volume
228
Category
Article
ISSN
0039-6028

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An ultrathin, a few monolayers (MLs) thick Si -layer, has been embedded in GaAs. The Si -layer properties have been electrically and structurally characterized. A conductivity transition has been observed, when going from free carrier transport in thin ()1 ML) ordered -layers to the disordered condi