Infrared absorption of hydrogen in proton-implanted GaP
β Scribed by Sobotta, H. ;Riede, V. ;Ascheron, C. ;Geist, V. ;Oppermann, D.
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 159 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
In situ-type infrared absorption measurements are carried out on bulk Si 1Γx Ge x after implantation with protons or deuterons at temperatures below 20 K. The infrared absorbance spectra recorded at 8 K after implanting the samples with protons reveal two intense and well-resolved lines located at a
## Abstract Optical absorption spectra of magnesiumβimplanted GaP single crystals are measured in the photon energy range below the fundamental edge. It is found that implantation results in the formation of exponential absorption tails with tailing energies up to about 0.8 eV and absorption coeffi